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Compensated State-of-Charge (CSOC) — Address 0x2C
CSOC reports the compensated available capacity as a percentage of the last measured discharge value (LMD).
The equation is:
Reserved Registers
Addresses 0x1E, 0x1F, 0x22-0x25, 0x2D-0x6D and 0x6F-0x75 are reserved and cannot be written by the host.
EEPROM Enable Register (EE_EN) — Address 0x6E
This register is used to enable host writes to EEPROM data locations (addresses 0x76 — 0x7F). The host must
write data 0xDD to this register to enable EEPROM programming. See the
Programming the EEPROM
section
for further information on programming the EEPROM bytes. Care should be taken to insure that no value except
0xDD is written to this location. All bqJUNIOR measurements and computations will be inhibited until 0x00 is
written back to address 0x6E.
EEPROM Data Registers (EE_DATA) — Address 0x76 — 0x7F
The EEPROM data registers contain information vital to the performance of the device. These registers are to be
programmed during pack manufacturing to allow flexibility in the design values of the battery to be monitored.
The EEPROM data registers are listed in
Table 2
. Detailed descriptions of what should be programmed follow.
See the
Programming the EEPROM
section for detailed information on writing the values to EEPROM.
Initial Last Measured Discharge High Byte (ILMD) — Address 0x76
This register contains the scaled design capacity of the battery to be monitored. ILMD is programmed in units of
914
μ
Vh per bit. The equation to calculate the initial LMD is:
ILMD = Design Capacity (mAh) * R
S
(m
) / (256 * 3.57)
where R
S
is the value of the sense resistor used in the system. This value is used to initialize the high byte of
LMD on a full reset. The low byte of LMD is initialized to 0.
Scaled EDVF Threshold (SEDVF) — Address 0x77
This register contains the scaled value of the threshold for zero battery capacity. To calculate the value to
program, use the following equation:
bq27010, bq27210
SLUS707B–APRIL 2006–REVISED JANUARY 2007
CSOC (%) = 100 * CAC / LMD
The host system has read-only access to this register.
Table 2. bq27010/bq27210 EEPROM Memory Map
Address
0x7F
0x7E
0x7D
0x7C
0x7B
0x7A
0x79
0x78
0x77
0x76
Name
TCOMP
DCOMP
GAF/DEDV
PKCFG
TAPER
DMFSD
ISLC/EDVT
SEDV1
SEDVF
ILMD
Function
Temperature compensation constants, OR, ID#1
Discharge rate compensation constants, OR, ID#2
Gain Age Factor / EDVI rate compensation
Pack configuration values
Aging estimate enable [7], charge termination taper current [6:0]
Digital magnitude filter and self-discharge rate constants
Initial standby load current / EDVI temperature compensation
Scaled EDV1 threshold
Scaled EDVF threshold
Initial last measured discharge high byte
SEDVF = Design EDVF (mV) / 8 – 256
18
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