參數(shù)資料
型號(hào)： 27210
廠商： Texas Instruments, Inc.
英文描述： Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR)
中文描述： 鋰離子和鋰聚合物電池電量監(jiān)測(cè)計(jì)芯片的便攜式應(yīng)用（bqJUNIOR）
文件頁(yè)數(shù)： 3/30頁(yè)
文件大小： 337K
代理商： 27210
www.ti.com
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range and supply voltage range (unless otherwise noted)
bq27010, bq27210
SLUS707B–APRIL 2006–REVISED JANUARY 2007
MIN
2.6
–20
–100
MAX
4.5
70
100
UNIT
V
°
C
mV
V
CC
T
A
Supply voltage
Operating free-air temperature
Input voltage, SRP and SRN with respect to V
SS
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GENERAL
I
CC(VCC)
I
CC(SLP)
I
CC(SHP)
I
CC(POR)
Active current
Sleep current
Ship current (bq27010 only)
Hibernate current
52
1.0
0.9
0.6
90
2.5
2.0
1.5
V
BAT
= V
CC
μA
0 < V
CC
< 1.5 V
RBI pin only, V
CC
<
V
CC(POR)
RBI current
< 1
20
nA
V
(POR)
POR threshold
Input impedance
Pull-down current
2.0
10
2.6
V
BAT, SRN, SRP
HDQ, SCL, SDA
M
μA
2.7
4.5
HDQ, SCL, SDA and GPIO
V
CC
< 4.2 V
V
CC
> 4.2 V
1.5
1.7
V
IH
High-level input voltage
V
IL
Low-level input voltage
Low-level output voltage (GPIO)
Low-level output voltage (HDQ, SCL, SDA)
VOLTAGE AND TEMPERATURE MEASUREMENT
Measurement range
Reported voltage resolution
Reported accuacy
Voltage update time
Reported temperature resolution
Reported temperature accuracy
Temperature update time
TIME, CURRENT AND CAPACITY (3.0 V
≤
V
CC
≤
4.2 V, 0
°
C
≤
T
A
≤
50
°
C)
f
OSC
Internal oscillator frequency
Current gain variability
Coulometric gain variability
Coulomb counter input offset
(1)
V
SRP
-V
SRN
differential input
EEPROM PROGRAMMING ( V
CC
≥
3.0 V, -20
°
C
≤
T
A
≤
35
°
C)
(2)
Programming voltage rise time
Programming voltage high time
Programming voltage fall time
Programming voltage
EEPROM programming current
0.7
0.4
0.4
V
I
OL
= 1 mA
I
OL
= 2 mA
V
OL
V
CC
= V
(BAT)
2.6
4.5
V
2.7
mV
-25
25
2.56
0.25
s
°
K
-3
3
2.56
s
-2.2%
-0.5%
-1.7%
-15
–100
1.5%
0.5%
0.5%
0
15
100
μV
mV
0.5
10
0.5
20
1.5
100
1.5
22
15
ms
ms
ms
V
mA
Applied to PGM pin
V
PROGRAM
= 21 V
(1)
(2)
Excludes contributions to the offset due to PCB layout or other factors external to the bq27010/bq27210.
Maximum number of programming cycles on the EEPROM is 10 and data retention time is 10 years at T
A
= 85
°
C.
3
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