參數(shù)資料
型號: 28F640J3A
廠商: Intel Corp.
英文描述: 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲器)
中文描述: 3伏特英特爾StrataFlash存儲器(3伏6400位英特爾的StrataFlash存儲器)
文件頁數(shù): 18/58頁
文件大小: 574K
代理商: 28F640J3A
28F128J3A, 28F640J3A, 28F320J3A
12
PRODUCT PREVIEW
NOTES:
1. Bus operations are defined in Table 3.
2. X = Any valid address within the device.
BA = Address within the block.
IA = Identifier Code Address: see Figure 5 and Table 15.
QA = Query database Address.
PA = Address of memory location to be programmed.
RCD = Data to be written to the read configuration register. This data is presented to the device on A
16-1
; all
other address inputs
are ignored.
3. ID = Data read from Identifier Codes.
QD = Data read from Query database.
SRD = Data read from status register. See Table 18 for a description of the status register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE#.
CC = Configuration Code.
4. The upper byte of the data bus (DQ
DQ
) during command writes is a “Don’t Care” in x16 operation.
5. Following the Read Identifier Codes command, read operations access manufacturer, device and block lock
codes. See
Read Identifier Codes Command
section for read identifier code data.
6. If the WSM is running, only DQ
7
is valid; DQ
15–
DQ
8
and DQ
6–
DQ
0
float, which places them in a high-impedance
state.
Table 4.
Intel StrataFlash Memory Command Set Definitions
(13)
Command
Scaleable
or Basic
Command
Set
(14)
Bus
Cycles
Req’d.
Notes
First Bus Cycle
Second Bus Cycle
Oper
(1)
Addr
(2)
Data
(3,4)
Oper
(1)
Addr
(2)
Data
(3,4)
Read Array
SCS/BCS
1
Write
X
FFH
Read Identifier
Codes
SCS/BCS
2
5
Write
X
90H
Read
IA
ID
Read Query
SCS
2
Write
X
98H
Read
QA
QD
Read Status
Register
SCS/BCS
2
6
Write
X
70H
Read
X
SRD
Clear Status
Register
SCS/BCS
1
Write
X
50H
Write to Buffer
SCS/BCS
> 2
7,8,9
Write
BA
E8H
Write
BA
N
Word/Byte
Program
SCS/BCS
2
10,11
Write
X
40H
or
10H
Write
PA
PD
Block Erase
SCS/BCS
2
9,10
Write
X
20H
Write
BA
D0H
Block Erase,
Program
Suspend
SCS/BCS
1
10,15
Write
X
B0H
Block Erase,
Program
Resume
SCS/BCS
1
10
Write
X
D0H
Configuration
SCS
2
Write
X
B8H
Write
X
CC
Set Read
Configuration
2
Write
X
60H
Write
RCD
03H
Set Block
Lock-Bit
SCS
2
Write
X
60H
Write
BA
01H
Clear Block
Lock-Bits
SCS
2
12
Write
X
60H
Write
X
D0H
Protection
Program
2
Write
X
C0H
Write
PA
PD
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