參數(shù)資料
型號(hào)： 28F1604C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
中文描述： 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器（3V的閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 1/64頁(yè)
文件大小： 927K
代理商： 28F1604C3
3 Volt Advanced+ Stacked Chip Scale
Package Memory
28F1602C3, 28F1604C3, 28F3204C3
Preliminary
Datasheet
Product Features
The 3 Volt Advanced+ Stacked Chip Scale Package (Stacked-CSP) memory delivers a feature-
rich solution for low-power applications. Stacked-CSP memory devices incorporate flash
memory and static RAM in one package with low voltage capability to achieve the smallest
system memory solution form-factor together with high-speed, low-power operations. The flash
memory offers a protection register and flexible block locking to enable next generation security
capability. Combined with the Intel-developed Flash Data Integrator (FDI) software, the
Stacked-CSP memory provides you with a cost-effective, flexible, code plus data storage
solution.
I
Flash Memory Plus SRAM
—Reduces Memory Board Space
Required, Simplifying PCB Design
Complexity
I
Stacked Chip Scale Package Technology
—Smallest Memory Subsystem Footprint
—16-Mbit Flash + 2-Mbit SRAM:
Area: 8 mm by 10 mm, Height: 1.4 mm
—32-Mbit Flash + 4-Mbit SRAM,
16-Mbit Flash + 4-Mbit SRAM:
Area: 8 mm by 12 mm, Height: 1.4 mm
I
Advanced SRAM Technology
—70 ns Access Time
—Low Power Operation
—Low Voltage Data Retention Mode
I
Flash Data Integrator (FDI) Software
—Real-Time Data Storage and Code
Execution in the Same Memory Device
—Full Flash File Manager Capability
I
Advanced+ Boot Block Flash Memory
—90 ns 16-Mb Access Time at 2.7 V
—100 ns 32-Mb Access Time at 2.7 V
—Instant, Individual Block Locking
—128-bit Protection Register
—12 V Production Programming
—Ultra Fast Program and Erase Suspend
—Extended Temperature –40 °C to +85 °C
I
Blocking Architecture
—Block Sizes for Code + Data Storage
—4-Kword Parameter Blocks (for data)
—64-Kbyte Main Blocks (for code)
—1,000,000 Erase Cycles per Block
I
Low Power Operation
—Async Read Current: 9 mA
—Standby Current: 10
μ
A
—Automatic Power Saving Mode
I
0.25
μ
m ETOX VI Flash Technology
I
Industry Compatibility
—Sourcing Flexibility and Stability
Order Number: 290666-005
February, 2000
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
相關(guān)PDF資料
PDF描述
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160S3 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
28F320S3 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F160B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160BJHE-BTLTH 制造商: 功能描述: 制造商:undefined 功能描述:
28F160C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
28F160C3BA90 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述:
28F160C3TD70 制造商: 功能描述: 制造商:undefined 功能描述:
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