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參數(shù)資料
| 型號(hào)： | 28F128 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Intel StrataFlash Memory |
| 中文描述： | 3伏特英特爾StrataFlash存儲(chǔ)器 |
| 文件頁數(shù)： | 1/58頁 |
| 文件大小： | 380K |
| 代理商： | 28F128 |
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3 Volt Intel
StrataFlash
Memory
28F128J3A, 28F640J3A, 28F320J3A (x8/x16)
Preliminary
Datasheet
Product Features
Capitalizing on Intel’s 0.25 μ generation two-bit-per-cell technology, second generation Intel
StrataFlash
memory products provide 2X the bits in 1X the space, with new features for mainstream
performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring
reliable, two-bit-per-cell storage technology to the flash market segment.
Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX
technology as Intel
’
s one-bit-per-cell products, Intel StrataFlash
memory
devices take advantage of over one billion units of manufacturing experience since 1987. As a
result, Intel StrataFlash components are ideal for code and data applications where high density and low
cost are required. Examples include networking, telecommunications, digital set top boxes, audio
recording, and digital imaging.
By applying FlashFile
memory family pinouts, Intel StrataFlash memory components allow easy design
migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation
Intel StrataFlash memory (28F640J5 and 28F320J5) devices.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel
0.25 micron ETOX
VI process technology, Intel StrataFlash memory provides
the highest levels of quality and reliability.
I
High-Density Symmetrically-Blocked
Architecture
—
128 128-Kbyte Erase Blocks (128 M)
—
6
4 128-Kbyte Erase Blocks (64 M)
—
32 128-Kbyte Erase Blocks (32 M)
I
High Performance Interface Asynchronous
Page Mode Reads
—
110/25 ns Read Access Time (32 M)
—
120/25 ns Read Access Time (64 M)
—
150/25 ns Read Access Time (128 M)
I
2.7 V
–
3.6 V V
CC
Operation
I
128-bit Protection Register
—
64-bit Unique Device Identifier
—
64-bit User Programmable OTP Cells
I
Enhanced Data Protection Features
Absolute Protection with V
PEN
= GND
—
Flexible Block Locking
—
Block Erase/Program Lockout during
Power Transitions
I
Packaging
—
56-Lead TSOP Package
—
64-Ball Intel
Easy BGA Package
I
Cross-Compatible Command Support Intel
Basic Command Set
—
Common Flash Interface
—
Scalable Command Set
I
32-Byte Write Buffer
—
6 μs per Byte Effective Programming
Time
I
12.8M Total Min. Erase Cycles (128 Mbit)
6.4M Total Min. Erase Cycles (64 Mbit)
3.2M Total Min. Erase Cycles (32 Mbit)
—
100K Minimum Erase Cycles per Block
I
Automation Suspend Options
—
Block Erase Suspend to Read
—
Block Erase Suspend to Program
—
Program Suspend to Read
I
0.25 μ Intel
StrataFlash
Memory
Technology
Order Number: 290667-008
April 2001
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
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| 28F3204C3 | 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器) |
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| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F128J3A | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel StrataFlash Memory |
| 28F128J3A150 | 制造商: 功能描述: 制造商:INTELC 功能描述: 制造商:undefined 功能描述: |
| 28F128J3A-150 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F128J3D75 | 制造商: 功能描述: 制造商:Intel 功能描述: |
| 28F128J3FS-12ET | 制造商: 功能描述: 制造商:undefined 功能描述: |
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