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參數(shù)資料
| 型號： | 28F640J3A |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲器) |
| 中文描述： | 3伏特英特爾StrataFlash存儲器（3伏6400位英特爾的StrataFlash存儲器） |
| 文件頁數(shù)： | 49/58頁 |
| 文件大?。?/td> | 574K |
| 代理商： | 28F640J3A |
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28F128J3A, 28F640J3A, 28F320J3A
PRODUCT PREVIEW
43
DC Characteristics, Continued
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages
and speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
2. I
and I
are specified with the device de-selected. If the device is read or written while in erase suspend
mode, the device’s current draw is I
CCR
or I
CCW
.
3. Includes STS.
4. Block erases, programming, and lock-bit configurations are inhibited when V
PEN
≤
V
PENLK
, and not guaranteed
in the range between V
(max) and V
(min), and above V
(max).
5. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL inputs are either V
IL
or V
IH
.
6. Sampled, not 100% tested.
7. Block erases, programming, and lock-bit configurations are inhibited when V
CC
< V
LKO
, and not guaranteed in
the range between V
(min) and V
(min), and above V
CC
(max).
8. Typically, V
is connected to V
(2.7 V–3.6 V).
9. Current values are specified over the commercial temperature range (0 °C to 70 °C) and may increase
slightly at –20 °C.
I
CCW
V
Program or Set Lock-Bit
Current
1,6,9
35
60
mA
CMOS Inputs, V
PEN
= V
CC
40
70
mA
TTL Inputs, V
PEN
= V
CC
I
CCE
V
Block Erase or Clear Block
Lock-Bits Current
1,6,9
35
70
mA
CMOS Inputs, V
PEN
= V
CC
40
80
mA
TTL Inputs, V
PEN
= V
CC
I
CCWS
I
CCES
V
Program Suspend or Block
Erase Suspend Current
1,2,9
10
mA
Device is disabled (see Table 2,
Chip Enable
Truth Table
)
Symbol
Parameter
Notes
Min
Max
Unit
Test Conditions
V
IL
Input Low Voltage
6
–0.5
0.8
V
V
IH
Input High Voltage
6
2.0
V
CCQ
+ 0.5
V
V
OL
Output Low Voltage
3,6
0.45
V
V
CCQ
= V
CCQ1
Min
I
OL
= 5.8 mA
0.4
V
V
CCQ
= V
CCQ2/3
Min
I
OL
= 2 mA
0.2
V
V
CCQ
= V
CCQ2/3
Min
I
OL
= 100 μA
V
OH
Output High Voltage
3,6
2.4
V
V
CCQ
= V
CCQ1
Min or V
CCQ
= V
CCQ2
Min
I
OH
= –2.5 mA (V
CCQ1
) = –2 mA (V
CCQ2/3
)
0.85
×
V
CCQ
V
V
CCQ
= V
CCQ
Min
I
OH
= –2.5 mA
V
CCQ
–
0.2
V
V
CCQ
= V
CCQ
Min
I
OH
= –100 μA
V
PENLK
V
Lockout during Program,
Erase and Lock-Bit Operations
4,6,8
0.8
V
V
PENH
V
during Block Erase,
Program, or Lock-Bit Operations
4,8
2.7
3.6
V
V
LKO
V
CC
Lockout Voltage
7
2.0
V
Symbol
Parameter
Notes
Typ
Max
Unit
Test Conditions
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