參數(shù)資料
型號(hào): 28F800B3
廠商: Intel Corp.
英文描述: SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述: 智能高級(jí)啟動(dòng)3座4 - ,8 - ,16 - ,32 - Mbit閃存家庭
文件頁(yè)數(shù): 22/48頁(yè)
文件大?。?/td> 304K
代理商: 28F800B3
SMART 3 ADVANCED BOOT BLOCK
E
22
PRELIMINARY
After any program or block erase operation is
complete (even after V
PP
transitions down to
V
PPLK
), the CUI must be reset to read array mode
via the Read Array command if access to the flash
memory array is desired.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require
careful
device
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Read current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#.
decoupling.
System
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
相關(guān)PDF資料
PDF描述
28F016SA16-MBIT Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
28F016SV 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016SA 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器)
28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器)
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器)
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