參數(shù)資料
型號: 29F004T-70
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512KX8] CMOS FLASH MEMORY
中文描述: 4分位[512KX8]的CMOS閃存
文件頁數(shù): 16/39頁
文件大?。?/td> 599K
代理商: 29F004T-70
16
MX29F004T/B
P/N:PM0554
REV. 1.9, OCT. 19, 2004
AC CHARACTERISTICS TA = 0
o
C to 70
o
C, VCC = 5V
±
10%
29F004T/B-55 29F004T/B-70 29F004T/B-90
29F004T/B-12
SYMBOL PARAMETER
MIN.
MAX.
MIN.
MAX. MIN.
MAX.
MIN.
MAX. UNIT
tOES
OE setup time
50
50
50
50
ns
tCWC
Command programming cycle
55
70
90
120
ns
tCEP
WE programming pulse width
45
45
45
50
ns
tCEPH1
WE programming pulse width High
20
20
20
20
ns
tCEPH2
WE programming pulse width High
20
20
20
20
ns
tAS
Address setup time
0
0
0
0
ns
tAH
Address hold time
45
45
45
50
ns
tDS
Data setup time
30
30
45
50
ns
tDH
Data hold time
0
0
0
0
ns
tCESC
CE setup time before command write
0
0
0
0
ns
tDF
Output disable time (Note 1)
30
30
40
40
ns
tAETC
Total erase time in auto chip erase
4(TYP.)
32
4(TYP.)
32
4(TYP.)
32
4(TYP.)
32
s
tAETB
Total erase time in auto sector erase
1.3(TYP.)10.4
1.3(TYP.)10.4
1.3(TYP.) 10.4
1.3(TYP.) 10.4
s
tAVT
Total programming time in auto verify
7
210
7
210
7
210
7
210
us
tBAL
Sector address load time
100
100
100
100
us
tCH
CE Hold Time
0
0
0
0
ns
tCS
CE setup to WE going low
0
0
0
0
ns
tVLHT
Voltage Transition Time
4
4
4
4
us
tOESP
OE Setup Time to WE Active
4
4
4
4
us
tWPP1
Write pulse width for chip protect
10
10
10
10
us
tWPP2
Write pulse width for chip unprotect
12
12
12
12
ms
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
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