參數(shù)資料
型號: 29F004T-70
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512KX8] CMOS FLASH MEMORY
中文描述: 4分位[512KX8]的CMOS閃存
文件頁數(shù): 20/39頁
文件大小: 599K
代理商: 29F004T-70
20
MX29F004T/B
P/N:PM0554
REV. 1.9, OCT. 19, 2004
All data in chip are erased. External erase verification is
not required because data is erased automatically by
internal control circuit. Erasure completion can be
verified by DATA polling and toggle bit checking after
automatic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)
AUTOMATIC CHIP ERASE TIMING WAVEFORM
AUTOMATIC CHIP ERASE TIMING WAVEFORM
tCWC
tAS
tCEP
tDS tDH
Vcc 5V
CE
OE
Q0,Q1,
Q4(Note 1)
WE
A11~A18
tCEPH1
tAH
Q7
Command In
A0~A10
Command In
Command In
Command In
Command In
Command In
tAETC
DATA polling
2AAH
555H
555H
Command #AAH
(Q0~Q7)
Command #55H
Command #80H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
555H
2AAH
555H
Command In
Command In
Command #AAH
Command In
Command In
Command #55H
Command In
Command In
Command #10H
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