參數(shù)資料
型號: 29F004T-70
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512KX8] CMOS FLASH MEMORY
中文描述: 4分位[512KX8]的CMOS閃存
文件頁數(shù): 38/39頁
文件大?。?/td> 599K
代理商: 29F004T-70
38
MX29F004T/B
P/N:PM0554
REV. 1.9, OCT. 19, 2004
REVISION HISTORY
Revision
Description
Page
Date
1.0
To remove "Advanced Information" data sheet marking and
contain information on products in full production.
To improve ICC1 spec:from 40mA @5MHz to 30mA @5MHz
1. Program/erase cycle times:10K cycles-->100K cycles
2. To add data retention minimum 20 years
3. To modify timing of sector address loading period while
operating multi-sector erase from 80us to 30us
4. To modify tBAL from 80us to 100us
5. To remove A9 from "timing waveform for sector protection for P28
system without 12V"
To remove A9 from "timing waveform for chip unprotection for P29
system without 12V"
Add erase suspend ready max. 100us in ERASE SUSPEND's
section at page 10
To modify "Package Information"
1. To corrected typing error
1. Add 55ns speed option
2. Add industrial grade level
1. Removed industrial grade
To modify Package Information
1. Added Pb-free part no. in Ordering Information
P1
JUL/01/1999
1.1
1.2
P1,14,15,33
P1,34
P1,34
P9
JUL/12/1999
DEC/20/1999
P16
1.3
P10
MAY/30/2000
1.4
1.5
1.6
P35~37
All
P14,16,33
P14,15,16,33
P14~16,33
P35~37
P33
JUN/12/2001
JUL/01/2002
JUL/18/2002
1.7
1.8
1.9
AUG/12/2002
NOV/21/2002
OCT/18/2004
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相關代理商/技術參數(shù)
參數(shù)描述
29F004T-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:4M-BIT [512KX8] CMOS FLASH MEMORY
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