參數(shù)資料
型號(hào)： 29F022T-120
廠(chǎng)商： Macronix International Co., Ltd.
英文描述： 2M-BIT[256K x 8]CMOS FLASH MEMORY
中文描述： 200萬(wàn)位[256K × 8]的CMOS閃存
文件頁(yè)數(shù)： 8/46頁(yè)
文件大?。?/td> 606K
代理商： 29F022T-120
8
P/N:PM0556
REV. 1.3, NOV. 11, 2002
MX29F022/022NT/B
The Automatic Sector Erase does not require the device
to be entirely pre-programmed prior to executing the
Automatic Set-up Sector Erase command and Automatic
Sector Erase command. Upon executing the Automatic
Sector Erase command, the device will automatically
program and verify the sector(s) memory for an all-zero
data pattern. The system does not require to provide
any control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verifi-
cation begin. The erase and verification operations are
complete when the data on Q7 is "1" and the data on Q6
stops toggling for two consecutive read cycles, at which
time the device returns to the Read mode. The system
does not required to provide any control or timing
during these operations.
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
set-up command-80H. Two more "unlock" write cycles
are then followed by the sector erase command-30H.
The sector address is latched on the falling edge of WE,
while the command(data) is latched on the rising edge
of WE. Sector addresses selected are loaded into
internal register on the sixth falling edge of WE. Each
successive sector load cycle started by the falling edge
of WE must begin within 30us from the rising edge of
the preceding WE. Otherwise, the loading period ends
and internal auto sector erase cycle starts. (Monitor Q3
to determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command
other than Sector Erase (30H) or Erase Suspend (B0H)
during the time-out period resets the device to read mode.
ERASE SUSPEND
This command is only valid while the state machine is
executing Automatic Sector Erase operation, and
therefore will only be responded during Automatic/Sec-
tor Erase operation. Writing the Erase Suspend com-
mand during the Sector Erase time-out immediately ter-
minates the time-out period and suspends the erase op-
eration. After this command has been executed, the
command register will initiate erase suspend mode. The
state machine will return to read mode automatically af-
ter suspend is ready. At this time, state machine only
allows the command register to respond to the Read
Memory Array, Erase Resume and Program commands.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspended
program operation is complete, the system can once
again read array data within non-suspended sectors.
SET-UP AUTOMATIC SECTOR ERASE COM-
MANDS
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F022T-55 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022T-70 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY
29F022T-90 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY
29F0303-0T0-10 功能描述:信號(hào)調(diào)節(jié) 266ohms 100MHz 8A Thru-hole RoHS:否 制造商:EPCOS 產(chǎn)品:Duplexers 頻率:782 MHz, 751 MHz 頻率范圍: 電壓額定值: 帶寬: 阻抗:50 Ohms 端接類(lèi)型:SMD/SMT 封裝 / 箱體:2.5 mm x 2 mm 工作溫度范圍:- 30 C to + 85 C 封裝:Reel
29F0318-0SR 功能描述:FERRITE 6A 83 OHM SMD RoHS:否 類(lèi)別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:EMI1812 頻率對(duì)應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類(lèi)型:差模 - 單線(xiàn) 封裝/外殼:1812（4532 公制） 安裝類(lèi)型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱(chēng):Q1712807A
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