參數(shù)資料
型號(hào)： 29F200C-55
廠商： Macronix International Co., Ltd.
英文描述： 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
中文描述： 200萬位[256Kx8/128Kx16]的CMOS閃存
文件頁數(shù)： 27/44頁
文件大?。?/td> 447K
代理商： 29F200C-55
27
P/N:PM1250
REV. 1.0 , DEC. 14, 2005
MX29F200C T/B
All data in chip are erased. External erase verification is
not required because data is erased automatically by
internal control circuit. Erasure completion can be
verified by Data# Polling and toggle bit checking after
AUTOMATIC CHIP ERASE TIMING WAVEFORM (WORD MODE)
AUTOMATIC CHIP ERASE TIMING WAVEFORM
automatic erase starts. Device outputs 0 during erasure
and 1 after erasure 0n Q7.(Q6 is for toggle bit; see toggle
bit, Data# Polling, timing waveform)
tCWC
tAS
tCEP
tDS tDH
tDF
VCC 5V
CE#
OE#
Q0~Q2
,Q4(Note 1)
WE#
A11~A16
tCEPH
tAH
tCESC
Q7
Command In
A0~A10
Command In
Command In
Command In
Command In
Command In
tAETC
Data# Polling
2AAH
555H
555H
Command #AAH
(Q0~Q7)
Command #55H
Command #80H
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit
555H
2AAH
555H
Command In
Command In
Command #AAH
Command In
Command In
Command #55H
Command In
Command In
Command #10H
相關(guān)PDF資料
PDF描述
29F200C-70 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F200C-90 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F256 262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
29F4000 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
29F400B-12PI 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F200C-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F200C-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F256 制造商:TI 制造商全稱:Texas Instruments 功能描述:262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
29F2875 制造商:Distributed By MCM 功能描述:E13-00E General Purpose Single Pole Switch
29F2876 制造商:Distributed By MCM 功能描述:E13-00H General Purpose Single Pole Switch
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