參數(shù)資料
型號: 29F200C-55
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
中文描述: 200萬位[256Kx8/128Kx16]的CMOS閃存
文件頁數(shù): 29/44頁
文件大?。?/td> 447K
代理商: 29F200C-55
29
P/N:PM1250
REV. 1.0 , DEC. 14, 2005
MX29F200C T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM (WORD MODE)
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector data indicated by A12 to A16 are erased. External
erase verification is not required because data are
erased automatically by internal control circuit. Erasure
completion can be verified by Data# Polling and toggle bit
checking after automatic erase starts. Device outputs 0
during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, Data# Polling, timing waveform)
tAH
Sector
Address0
555H
2AAH
2AAH
555H
555H
Sector
Address1
Sector
Addressn
Vcc 5V
CE#
OE#
Q0,Q1,
Q4(Note 1)
WE#
A12~A16
Q7
A0~A10
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command
In
Command #30H
Command #30H
Command #30H
Command #55H
Command #AAH
Command #80H
Command #55H
Command #AAH
(Q0~Q7)
Command
In
Command
In
tDH
tDS
tCEP
tCWC
tAETB
tBAL
Data# Polling
tCEPH
tAS
Notes:
(1). Q6:Toggle bit, Q5:Timing-limit bit, Q3: Time-out bit, Q2: Toggle bit
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29F200C-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F200C-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
29F256 制造商:TI 制造商全稱:Texas Instruments 功能描述:262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES
29F2875 制造商:Distributed By MCM 功能描述:E13-00E General Purpose Single Pole Switch
29F2876 制造商:Distributed By MCM 功能描述:E13-00H General Purpose Single Pole Switch