參數(shù)資料
型號(hào): 29F200C-70
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
中文描述: 200萬(wàn)位[256Kx8/128Kx16]的CMOS閃存
文件頁(yè)數(shù): 22/44頁(yè)
文件大?。?/td> 447K
代理商: 29F200C-70
22
P/N:PM1250
REV. 1.0 , DEC. 14, 2005
MX29F200C T/B
AC CHARACTERISTICS
TA=-40
°
C to 85
°
C, VCC=5V
±
10%
Speed Option
70
0
70
35
20
0
45
35
0
0
20
4
32
0.7
15
9/11
300/360
50
0
0
SYMBOL
tOES
tCWC
tCEP
tCEPH
tAS
tAH
tDS
tDH
tCESC
tDF
tAETC
PARAMETER
OE# setup time
Command programming cycle
WE# programming pulse width
WE# programming pulse width High
Address setup time
Address hold time
Data setup time
Data hold time
CE# setup time before command write
Output disable time (Note 1)
Erase time in auto chip erase
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
MIN.
MIN.
55(Note 2)
0
55
35
20
0
45
35
0
0
20
4
32
0.7
15
9/11
300/360
50
0
0
90
0
90
45
20
0
45
35
0
0
20
4
32
0.7
15
9/11
300/360
50
0
0
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s
us
us
us
ns
ns
tAETB
Erase time in auto sector erase
tAVT
Programming time in auto verify
(Byte/Word program time)
Sector address load time
CE# Hold Time
CE# setup to WE# going low
tBAL
tCH
tCS
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
2. Under condition of VCC=5V
±
10%,CL=30pF,VIH/VIL=3.0V/0V,VOH/VOL=1.5V/1.5V,IOL=2mA,IOH=2mA.
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