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參數(shù)資料
| 型號： | 29F200C-70 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY |
| 中文描述： | 200萬位[256Kx8/128Kx16]的CMOS閃存 |
| 文件頁數(shù)： | 6/44頁 |
| 文件大?。?/td> | 447K |
| 代理商： | 29F200C-70 |
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6
P/N:PM1250
REV. 1.0 , DEC. 14, 2005
MX29F200C T/B
First Bus
Second Bus
Third Bus
Fourth Bus
Fifth Bus
Sixth Bus
Command
Bus
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset
1
XXXH F0H
Read
1
RA
RD
Read Silicon ID
Word
4
555H
AAH
2AAH
55H
555H
90H
ADI
DDI
Byte
4
AAAH AAH
555H
55H
AAAH 90H
ADI
DDI
Sector Protect
Word
4
555H
AAH
2AAH
55H
555H
90H
(SA)
XX00H
Verify
X02H
XX01H
Byte
4
AAAH AAH
555H
55H
AAAH 90H
(SA)
00
X04H
01
Program
Word
4
555H
AAH
2AAH
55H
555H
A0H
PA
PD
Byte
4
AAAH AAH
555H
55H
AAAH A0H
PA
PD
Chip Erase
Word
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
555H 10H
Byte
6
AAAH AAH
555H
55H
AAAH 80H
AAAH
AAH
555H
55H
AAAH 10H
Sector Erase
Word
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
SA
30H
Byte
6
AAAH AAH
555H
55H
AAAH 80H
AAAH
AAH
555H
55H
SA
30H
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
Unlock for sector
6
555H
AAH
2AAH
55H
555H
80H
555H
AAH
2AAH
55H
555H 20H
protect/unprotect
NOTES:
1. ADI = Address of Device identifier; A1=0, A0 =0 for manufacture code, A1=0, A0 =1 for device code.(Refer to Table 3)
DDI = Data of Device identifier : C2H for manufacture code,51H/57H(x8) and 2251H/2257H(x16) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3. The system should generate the following address patterns: 555H or 2AAH to Address A0~A10.
Address bit A11~A16=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA).
Write Sequence may be initiated with A11~A16 in either state.
4. For Sector Protection Verify Operation : If read out data is 01H, it means the sector has been protected. If read out data is
00H, it means the sector is still not being protected.
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing
them in the improper sequence will reset the device to
the read mode. Table 1 defines the valid register
command sequences. Note that the Erase Suspend
(B0H) and Erase Resume (30H) commands are valid
only while the Sector Erase operation is in progress.
Either of the two reset command sequences will reset
the device(when applicable).
TABLE 1. SOFTWARE COMMAND DEFINITIONS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 29F200C-90 | 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY |
| 29F256 | 262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES |
| 29F4000 | 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY |
| 29F400B-12PI | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
| 29F400B-12TC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 29F200C-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY |
| 29F256 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:262,144-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORIES |
| 29F2875 | 制造商:Distributed By MCM 功能描述:E13-00E General Purpose Single Pole Switch |
| 29F2876 | 制造商:Distributed By MCM 功能描述:E13-00H General Purpose Single Pole Switch |
| 29F2877 | 制造商:Distributed By MCM 功能描述:E13-00J General Purpose Single Pole Switch |
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