參數(shù)資料
型號: 29F400T-90TC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù): 24/38頁
文件大?。?/td> 240K
代理商: 29F400T-90TC
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
- 24 -
AC CHARACTERISTICS
Read-Only Operations
PARAMETER SYM.
DESCRIPTION
TEST SETUP
-90
-120
-150
UNIT
JEDEC
tAVAV
tAVQV
Standard
tRC
tACC
Read Cycle Time(2)
Address to Output Delay
Min.
Max.
90
90
120
120
150
150
nS
nS
CE
= V
IL
OE
= V
IL
tELQV
tGLQV
tCE
tOE
Chip Enable to Output Delay
OE
= V
IL
Max.
90
120
150
nS
Output Enable to Output
Delay
Chip Enable to Output High
Z
(3,4)
Output Enable to Output High
Z
(2,3)
Output Hold Time from
Addresses,
CE
or
OE
,
Whichever Occurs First
RESET
Pin Low to Read
Mode
(4)
Max.
35
50
55
nS
tEHQZ
tHZ
Max.
20
30
35
nS
tGHQZ
tDF
20
30
35
nS
tAXQX
tOH
Min.
0
0
0
nS
tREADY
Max.
20
20
20
mS
tELFL
tELFH
CE
to
BYTE
Switching
Low or High
Max.
5
5
5
nS
Notes:
1. Test Conditions: Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 nS; Input pulse levels: 0.45 V to 2.4 V
2. Timing measurement reference level
Input: 0.8 and 2.0 V; Output: 0.8 and 2.0 V
3. Output driver disable time.
4. Not 100% tested.
UNDER
TEST
C
L
6.2 KOhm
IN3064 or
2.7 KOhm
Diodes = IN3064
5.0 V
Figure 7. Test Condition
Note: CL = 100 pF including jig capacitance.
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