參數(shù)資料
型號: 29F400T-90TC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
中文描述: 4MEGABIT(為512k × 8 / 256K × 16)5VOLT扇區(qū)擦除的CMOS閃存
文件頁數(shù): 4/38頁
文件大?。?/td> 240K
代理商: 29F400T-90TC
BRIGHT Preliminary BM29F400T/BM29F400B
Microelectronics
Inc.
- 4 -
BLOCK DIAGRAM
Vcc
Vss
RY/BY
Buffer
State
Control
Command
Register
Vcc Detector
Timer
PGM Voltage
Generator
Erase Boltage
Generator
Chip Enable
Output Enable
Logic
Input/Output
Buffers
Data Latch
Y-Gating
Cell Matrix
X-Decoder
Y-Decodor
Address
Latch
STB
STB
A0-A16
A-1
/OE
/CE
/WE
/BYTE
/RESET
DQ0-DQ15
BUS OPERATION
Table 1. Bus Operations
(
BYTE
= V
IH
)
(1)
OPERATION
CE
OE
WE
A0
A1
A6
A9
DQ0-DQ15
RESET
Electronic ID Manufacturer(2)
Electronic ID Device(2)
Read(3)
L
L
H
L
L
L
V
ID
Code
H
L
L
H
H
L
L
V
ID
Code
H
L
L
H
A0
A1
A6
A9
D
OUT
H
Standby
H
X
X
X
X
X
X
High Z
H
Hardware Reset
X
X
X
X
X
X
X
High Z
L
Output Disable
L
H
H
X
X
X
X
High Z
D
IN
(4)
X
Write
Verify Sector Protect(2)
L
H
L
A0
A1
A6
A9
H
L
L
H
L
H
L
V
ID
Code
H
Temporary Sector Unprotect
X
X
X
X
X
X
X
X
V
ID
Notes:
1. L = V
IL
, H = V
IH
, X = Don't Care. See DC Characteristics for voltage levels.
2. Manufacturer and device codes may also be accessed via a command register sequence. Refer to Table 6.
3. WE can be V
IL
if CE is V
IL
, OE at V
IH
initiates the write operations.
4. Refer to Table 6 for valid DIN during a write operation.
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