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參數資料
| 型號： | 2N3740A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | Medium Power PNP Transistors |
| 中文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2N3740A |
MSC1040.PDF 03-12-99
2N3740A
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CEO
*
Collector-Emitter Voltage
V
EB
*
Emitter-Base Voltage
V
CB
*
Collector-Base Voltage
I
C
*
Peak Collector Current
I
C
*
Continuous Collector Current
I
B
*
Base Current
T
STG
*
Storage Temperature
T
J
*
Operating Junction Temperature
P
D
*
Total Device Dissipation
T
C
= 25
°
C
Derate above 25
°
C
Thermal Impedance
CHARACTERISTIC
VALUE
60
7.0
60
10
4.0
2.0
-65 to 200
-65 to 200
25
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°
C
°
C
Watts
θ
JC
0.143
7
W/
°
C
°
C/W
Medium Power
PNP Transistors
TO-66
APPLICATIONS:
Drivers
Switches
Medium-Power Amplifiers
FEATURES:
Low Saturation Voltage: 0.6 V
CE(sat)
@ I
C
= 1.0 Amp
High Gain Characteristics:
Excellent Safe Area Limits
Low Collector Cutoff Current:
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
°
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
*
Indicates JEDEC registered data.
hFE @ I
C
= 250 mA: 30-100
100 nA (Max) 2N3740A
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3741A | Medium Power PNP Transistors |
| 2N3749 | PNP POWER SILICON TRANSISTOR |
| 2N3771 | High Power NPN Silicon Power Transistor(30A,40V（集電極-發(fā)射極）,150W，硅NPN大功率晶體管) |
| 2N3772 | High Power NPN Silicon Power Transistor(20A,60（集電極-發(fā)射極）V,150W，硅NPN大功率晶體管) |
| 2N3773 | Complementary Silicon Power Transistor(16A,140V（集電極-發(fā)射極）,150W，補償型，硅NPN功率晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3740AR | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO66 |
| 2N3740JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 4A 3-Pin(2+Tab) TO-66 |
| 2N3740R | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:PNP |
| 2N3741 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 4A 3-Pin(2+Tab) TO-66 制造商:Aeroflex / Metelics 功能描述:PNP POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 4A 3PIN TO-66 - Bulk |
| 2N3741A | 制造商:Aeroflex / Metelics 功能描述:PNP POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 4A 2PIN TO-66 - Bulk |
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