參數(shù)資料
型號: 2N3740A
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 功率晶體管
英文描述: Medium Power PNP Transistors
中文描述: 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66
文件頁數(shù): 2/3頁
文件大?。?/td> 62K
代理商: 2N3740A
MSC1040.PDF 03-12-99
2N3740A
ELECTRICAL CHARACTERISTICS:
(25
°
Case Temperature Unless Otherwise Noted)
VALUE
Min.
60
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Max.
----
Units
V
CEO(sus)*
Collector-Emitter
Sustaining Voltage
Emitter Base Cutoff
Current
Collector Cutoff Current
I
C
= 100 mAdc, I
B
= 0 (Note 1)
Vdc
I
EB0*
V
EB
= 7.0 Vdc
----
100
nAdc
I
CEX*
V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc
V
CE
= 40 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150
°
C
V
CE
= 40 Vdc, I
B
= 0
----
----
----
100
0.5
1.0
nAdc
mAdc
μ
Adc
I
CEO
*
Collector-Emitter Cutoff
Current
Collector Base Cutoff
Current
DC Current Gain
(Note 1)
I
CBO*
V
CB
= 60 Vdc, I
E
= 0
----
100
nAdc
h
FE
*
I
C
= 100 mAdc, V
CE
= 1.0 Vdc
I
C
= 250 mAdc, V
CE
= 1.0 Vdc
I
C
= 500 mAdc, V
CE
= 1.0 Vdc
I
C
= 1.0 Adc, V
CE
= 1.0 Vdc
I
C
= 1.0 Adc, I
B
= 125 mAdc
40
30
20
10
----
----
100
----
----
0.6
----
----
----
----
Vdc
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Voltage
(Note 1)
V
BE*
I
C
= 250 mAdc, V
CE
= 1.0 Vdc
----
1.0
Vdc
f
T
*
Current Gain Bandwidth
Product
Small-Signal Current
Gain
Common Base Output
Capacitance
I
C
= 100 mAdc, V
CE
= 10 Vdc, f = 1.0 MHz
3.0
----
MHz
h
fe
*
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
25
----
----
C
ob*
V
CB
= 10 Vdc, I
C
= 0, f = 100 kHz
----
100
pF
Note 1: Pulse Test: PW
300
μ
s, Duty Cycle
2.0%
* Indicates JEDEC registered data.
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