參數(shù)資料
型號: 2N4399
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: PNP Silicon High-Power Transistor(60V(集電極-發(fā)射極)硅PNP大功率晶體管)
中文描述: 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
封裝: METAL, TO-3, 2 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 104K
代理商: 2N4399
2N4398 2N4399 2N5745
http://onsemi.com
3
**ON Semiconductor Guarantees this Data in Addition to JEDEC Registered Data.
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
OFF CHARACTERISTICS
(V
CE
= 80 Vdc, I
B
= 0)
Collector–Emitter Sustaining Voltage (1)
C
B
2N4398
2N4398, 2N4399
V
80
40
5.0
(V
CE
= 40 Vdc, I
B
= 0)
10
mAdc
5.0
mAdc
CE
BE(off)
C
I
EBO
(V
= 40 Vdc, V
= 1.5 Vdc)
CE
BE(off)
(V
CE
= 30 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150
°
C)
I
1.0
1.0
5.0
mAdc
CB
E
(V
CB
= 60 Vdc, I
E
= 0)
CBO
5.0
mAdc
Emitter Cutoff Current (V
EB
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
C
B
(I
C
= 10 Adc, V
CE
= 2.0 Vdc)
C
CE
(I
C
= 30 Adc, V
CE
= 4.0 Vdc)
FE
5.0
15
15
5.0
2.0
60
60
Collector–Emitter Saturation Voltage (1)
C
B
(I
C
= 15 Adc, I
B
= 1.5 Adc)
(I
C
= 20 Adc, I
B
= 4.0 Adc)
V
2.5
2.5
0.75
1.0
1.5
Vdc
(I
C
= 20 Adc, I
B
= 2.0 Adc)**
C
B
Base–Emitter Saturation Voltage (1)
C
B
V
BE(sat)
1.85
Base–Emitter On Voltage (1)
(I
= 15 Adc, V
= 2.0 Vdc)
(I
C
= 20 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
2.5
相關(guān)PDF資料
PDF描述
2N5745 PNP Silicon High-Power Transistor(80V(集電極-發(fā)射極)硅PNP大功率晶體管)
2N4401 General Purpose NPN Silicon Transistor(40V(集電極-發(fā)射極)通用型硅NPN晶體管)
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