- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371459 > 2N4401 (ON SEMICONDUCTOR) General Purpose NPN Silicon Transistor(40V（集電極-發(fā)射極）通用型硅NPN晶體管) PDF資料下載
參數(shù)資料
| 型號： | 2N4401 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose NPN Silicon Transistor(40V（集電極-發(fā)射極）通用型硅NPN晶體管) |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 2N4401 |
2N4401
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
6.0
Vdc
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
BEV
0.1
Adc
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
CEX
0.1
Adc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
h
FE
20
40
80
100
40
300
CollectorEmitter Saturation Voltage (I
C
= 150 mAdc, I
B
= 15 mAdc)
CollectorEmitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
0.4
0.75
Vdc
BaseEmitter Saturation Voltage (I
C
= 150 mAdc, I
B
= 15 mAdc)
BaseEmitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.75
0.95
1.2
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
250
MHz
CollectorBase Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
6.5
pF
EmitterBase Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
eb
30
pF
Input Impedance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
1.0
15
k
Voltage Feedback Ratio (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
0.1
8.0
X 10
4
SmallSignal Current Gain (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
40
500
Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
1.0
30
mhos
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE
= 2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
15
ns
Rise Time
t
r
20
ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
225
ns
Fall Time
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
t
f
30
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4401 | NPN General Purpose Amplifier(NPN型通用放大器) |
| 2N4403G | General Purpose Transistors |
| 2N4403RA | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92 |
| 2N4409 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2N4410 | NPN Silicon Amplifer Transistor(80V（集電極-發(fā)射極）硅NPN放大器晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4401 BULK | 制造商:MCC 功能描述:General Purpose NPN Through Hole Transistor TO-92 |
| 2N4401 T/R | 功能描述:兩極晶體管 - BJT NPN SW 600MA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4401,116 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE WIDE PITCH RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4401/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General Purpose Transistors |
| 2N4401/D74Z | 制造商:Fairchild Semiconductor Corporation 功能描述:1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。