參數(shù)資料
型號(hào)： 2N4403G
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： General Purpose Transistors
中文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： LEAD FREE, CASE 29-11, TO-226AA, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 104K
代理商： 2N4403G
2N4403
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
40
Vdc
EmitterBase Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
BEV
0.1
Adc
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
I
CEX
0.1
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 2.0 Vdc) (Note 1)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc) (Note 1)
h
FE
30
60
100
100
20
300
CollectorEmitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
0.4
0.75
Vdc
BaseEmitter Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.75
0.95
1.3
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
200
MHz
CollectorBase Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
8.5
pF
EmitterBase Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
eb
30
pF
Input Impedance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
1.5 k
15 k
ohms
Voltage Feedback Ratio (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
0.1
8.0
X 10
4
SmallSignal Current Gain (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
60
500
Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
1.0
100
mhos
SWITCHING CHARACTERISTICS
Delay Time
= 30 Vdc, V
= +2.0 Vdc,
(V
CC
30 Vdc, V
BE
+2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
15
ns
Rise Time
t
r
20
ns
Storage Time
= 30 Vdc, I
= 150 mAdc,
(V
CC
30 Vdc, I
C
150 mAdc,
I
B1
= 15 mA, I
B2
= 15 mA)
t
s
225
ns
Fall Time
t
f
30
ns
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
相關(guān)PDF資料
PDF描述
2N4403RA TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92
2N4409 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92
2N4410 NPN Silicon Amplifer Transistor(80V（集電極-發(fā)射極）硅NPN放大器晶體管)
2N4410 NPN General Purpose Amplifier(NPN型通用放大器)
2N4441 SILICON CONTROLLED RECTIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4403G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
2N4403L-T92-B 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER
2N4403L-T92-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER
2N4403NLBU 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4403RA 功能描述:兩極晶體管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*