參數(shù)資料
型號: 2N55551ZL1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Amplifier Transistors
中文描述: 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226AA, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 71K
代理商: 2N55551ZL1
2N5550, 2N5551
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
2N5550
2N5551
V
(BR)CEO
140
160
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0 )
2N5550
2N5551
V
(BR)CBO
160
180
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
6.0
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100
°
C)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100
°
C)
2N5550
2N5551
2N5550
2N5551
I
CBO
100
50
100
50
nAdc
Adc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
50
nAdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
2N5550
2N5551
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
2N5550
2N5551
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
2N5550
2N5551
h
FE
60
80
60
80
20
30
250
250
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
2N5550
2N5551
V
CE(sat)
0.15
0.25
0.20
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Both Types
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
2N5550
2N5551
V
BE(sat)
1.0
1.2
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100
300
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
6.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
2N5550
2N5551
C
ibo
30
20
pF
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50
200
Noise Figure
(I
C
= 250 Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k ,
f = 1.0 kHz)
2N5550
2N5551
NF
10
8.0
dB
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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