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參數(shù)資料
| 型號： | 2N5609 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | CABLE FLAT FLEX 17 COND .050,1 |
| 中文描述： | 硅PNP晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2N5609 |
2N5609
Silicon PNP Transistors
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
PARAMETER
RATING
80
80
5.0
UNIT
V
V
V
A
A
W
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
5.0
25
150
-55~150
SYMBOL
I
CBO
I
EBO
I
CEO
V
CBO
V
(BR)CEO
V
EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
CEsat-4
h
FE-1
h
FE-2
h
FE-3
h
FE-4
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frequency at f = 1MHz
Fall time
Tum-off storage time
CONDITIONS
V
CB
=80V;I
E
=0
V
EB
=5V, I
C
=0
MIN
MAX
10
10
UNIT
A
A
I
C
=10mA,I
B
=0
80
V
I
C
=1A; I
B
=0.1A
0.5
V
I
C
=2.5A,V
CE
=5V
70
200
I
C
=1A,V
CE
=2V
1.0
V
f
T
t
f
t
s
Electrical Characteristics Tc=25
TO-66
INCHANGE
Power Transistors
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相關代理商/技術參數(shù) |
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| 2N561 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3 |
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| 2N5611 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 100V 5A 2PIN TO-66 - Bulk |
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| 2N5612 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 5A 2PIN TO-66 - Bulk |
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