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參數(shù)資料
| 型號： | 2N5630 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon NPN Power Transistor(16A，200W，120V（集電極-發(fā)射極），補償型硅NPN功率晶體管) |
| 中文描述： | 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 2N5630 |
High-Voltage High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
High Collector Emitter Sustaining Voltage —
V
CEO(sus)
= 120 Vdc — 2N5630, 2N6030
= 140 Vdc — 2N5631, 2N6031
High DC Current Gain — @ I
C
= 8.0 Adc
h
FE
= 20 (Min) — 2N5630, 2N6030
= 15 (Min) — 2N5631, 2N6031
Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
Collector–Base Voltage
200
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
V
CB
Symbol
V
120
2N6030
120
140
7.0
2N6031
140
Vdc
Unit
Vdc
Vdc
V
EB
I
C
Collector Current — Continuous
16
Adc
Derate above 25 C
1.14
W/ C
Operating and Storage Junction
T
J
, T
stg
–65 to +200
C
JC
00
20
40
60
80
100
120
140
200
Figure 1. Power Derating
T
C
, TEMPERATURE (
°
C)
150
100
50
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
P
160
180
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 8
1
Publication Order Number:
2N5630/D
2N5630
2N5631
PNP
2N6030
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100–120–140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
NPN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6030 | Complementary Silicon PNP Power Transistor(16A，200W，120V（集電極-發(fā)射極），補償型硅PNP功率晶體管) |
| 2N5631 | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 2N6031 | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 2N5638 | JFET Chopper Transistors |
| 2N5638RLRA | JFET Chopper Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5631 | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5631/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Voltage High-Power Transistors |
| 2N5631G | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5632 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述: |
| 2N5633 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk |
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