- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371466 > 2N60B (Fairchild Semiconductor Corporation) 600V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N60B |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 600V的N溝道MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 647K |
| 代理商： | 2N60B |
Rev. B, November 2001
2001 Fairchild Semiconductor Corporation
S
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
I
D
,
V
SD
, Source-Drain voltage [V]
2
4
6
8
10
10
-1
10
0
150
o
C
25
o
C
-55
o
C
※
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
※
Note : I
D
= 2.0 A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
1
2
3
4
5
6
0
3
6
9
12
15
18
V
GS
= 20V
V
GS
= 10V
※
Note : T
J
= 25
℃
R
D
Ω
D
I
D
, Drain Current [A]
10
-1
10
0
10
1
10
-2
10
-1
10
0
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6116 | PROGRAMMABLE UNIJUNCTION TRANSISTOR|TO-18 |
| 2N6117 | PROGRAMMABLE UNIJUNCTION TRANSISTOR|TO-18 |
| 2N6118 | PROGRAMMABLE UNIJUNCTION TRANSISTOR|TO-18 |
| 2N6137 | Military Planar TO-18 Hermetic |
| 2N6147 | SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N60G-T2Q-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 600V N-CHANNEL POWER MOSFET |
| 2N60G-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 600V N-CHANNEL POWER MOSFET |
| 2N60G-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 600V N-CHANNEL POWER MOSFET |
| 2N60G-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 600V N-CHANNEL POWER MOSFET |
| 2N60G-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 600V N-CHANNEL POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。