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參數(shù)資料
| 型號： | 2N6284 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN DARLINGTON POWER SILICON TRANSISTOR |
| 中文描述： | 20 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | UNCASED CHIP |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2N6284 |
TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 504
Devices
Qualified Level
2N6283
2N6284
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N6583
80
80
2N6284
100
100
7.0
0.5
20
175
87.5
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1)
Derate linearly @ 1.17 W/
0
C above T
C
> +25
0
C
@ T
C
= +25
0
C
@ T
C
= +100
0
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
Max.
0.857
Unit
0
C/W
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 40 Vdc
V
CE
= 50 Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
Symbol
Min.
Max.
Unit
2N6283
2N6284
V
(BR)
CEO
80
100
Vdc
2N6283
2N6284
I
CEO
1.0
1.0
5.0
5.0
mAdc
2N6283
2N6284
I
CEX
mAdc
I
EBO
2.5
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-3*
(TO-204AA)
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N6284G | 功能描述:達(dá)林頓晶體管 20A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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