參數(shù)資料
型號(hào)： 2N6284
廠商： MICROSEMI CORP
元件分類： 功率晶體管
英文描述： NPN DARLINGTON POWER SILICON TRANSISTOR
中文描述： 20 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： UNCASED CHIP
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 64K
代理商： 2N6284
2N6283, 2N6284 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 3.0 Vdc
I
C
= 10 Adc, V
CE
= 3.0 Vdc
I
C
= 20 Adc, V
CE
= 3.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 20 Adc, I
B
= 200 mAdc
I
C
= 10 Adc, I
B
= 40 mAdc
Base-Emitter Saturation Voltage
I
C
= 20 Adc, I
B
= 200 mAdc
Base-Emitter Voltage
I
C
= 10 Adc, V
CE
= 3.0Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 10 Adc; I
B
= 40 mAdc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 10 Adc; I
B1
=
I
B2
= 40 mAdc
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 8.75 Vdc, I
C
= 20 Adc
Test 2
V
CE
= 30 Vdc, I
C
= 5.8 Adc
Test 3
V
CE
= 80 Vdc, I
C
= 100 mAdc
V
CE
= 100 Vdc, I
C
= 100 mAdc
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
h
FE
1,500
1,250
500
18,000
V
CE(sat)
3.0
2.0
Vdc
V
BE(sat)
4.0
Vdc
V
BE
2.8
Vdc
h
fe
8.0
80
h
fe
700
C
obo
300
pF
t
on
2.0
μ
s
t
off
10
μ
s
2N6283
2N6284
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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