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參數(shù)資料
| 型號： | 2N6338 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Power NPN Silicon Transistor(25A，200W，100V（集電極-發(fā)射極），硅NPN大功率晶體管) |
| 中文描述： | 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 2N6338 |
HighPower NPN Silicon
Transistors
. . . designed for use in industrial
military power amplifier and
switching circuit applications.
High Collector
Emitter Sustaining Voltage
V
CEO(sus)
= 100 Vdc (Min)
2N6338
= 150 Vdc (Min)
2N6341
High DC Current Gain
h
FE
= 30
120 @ I
C
= 10 Adc
= 12 (Min) @ I
C
= 25 Adc
Low Collector
Emitter Saturation Voltage
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 10 Adc
Fast Switching Times @ I
C
= 10 Adc
t
r
= 0.3 ms (Max)
t
s
= 1.0 ms (Max)
t
f
= 0.25 ms (Max)
These devices are available in Pb
free package(s). Specifications herein
apply to both standard and Pb
free devices. Please see our website at
www.onsemi.com for specific Pb
free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
*MAXIMUM RATINGS
Rating
Continuous
@ T
C
= 25 C
Temperature Range
Symbol
V
CB
CEO
EB
2N6338
120
2N6341
180
Unit
Vdc
Collector
Base Voltage
200
Watts
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
JC
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 11
1
Publication Order Number:
2N6338/D
2N6338
2N6341
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
*
CASE 1
07
TO
204AA
(TO
3)
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| 2N6341 | High-Power NPN Silicon Transistor(25A，200W，150V（集電極-發(fā)射極），硅NPN大功率晶體管) |
| 2N6339 | High-Power NPN Silicon Transistor(25A，200W，120V（集電極-發(fā)射極），硅NPN大功率晶體管) |
| 2N6340 | High-Power NPN Silicon Transistor(25A，200W，140V（集電極-發(fā)射極），硅NPN大功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6338/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Power NPN Silicon Transistors |
| 2N6338G | 功能描述:兩極晶體管 - BJT 25A 100V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6338X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-204AA |
| 2N6339 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 30A 3PIN TO-3 - Bulk |
| 2N6339ACECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 25A I(C) | TO-204AA |
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