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參數(shù)資料
| 型號： | 2N6338 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Power NPN Silicon Transistor(25A，200W，100V（集電極-發(fā)射極），硅NPN大功率晶體管) |
| 中文描述： | 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 2N6338 |
2N6338 2N6341
http://onsemi.com
3
Figure 2. Switching Time Test Circuit
1000
700
0.3
Figure 3. Turn
On Time
I
C
, COLLECTOR CURRENT (AMP)
t
500
100
70
50
10
0.5 0.7
2.0
3.0
7.0
30
+ 11 V
0
V
CC
SCOPE
R
B
10 OHMS
5.0 V
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
R
C
8.0 OHMS
20
30
5.0
20
10
μ
s
9.0 V
200
300
1.0
10
NOTE: For information on Figures 3 and 6, R
B
and R
C
were
varied to obtain desired test conditions.
+ 80 V
1N4933
t
d
@ V
BE(off)
= 6.0 V
V
CC
= 80 V
I
C
/I
B
= 10
T
J
= 25
°
C
t
r
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.010.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r
T
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
θ
JC
= r(t)
θ
JC
θ
JC
= 0.875
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3
3.0
30
300
100
2.0
Figure 5. Active Region Safe Operating Area
50
5.0
2.0
1.0
0.01
10
20
70
200
T
J
= 200
°
C
2N6338
2N6341
0.1
0.05
10
0.5
I
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
20
0.2
50
100
200
μ
s
5.0 ms
1.0 ms
dc
0.02
3.0
5.0
30
7.0
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN
LIMITED CURVES APPLY
BELOW RATED V
CEO
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
200 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6338/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Power NPN Silicon Transistors |
| 2N6338G | 功能描述:兩極晶體管 - BJT 25A 100V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6338X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-204AA |
| 2N6339 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 30A 3PIN TO-3 - Bulk |
| 2N6339ACECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 25A I(C) | TO-204AA |
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