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參數(shù)資料
| 型號(hào)： | 2N6796 |
| 廠(chǎng)商： | INTERSIL CORP |
| 元件分類(lèi)： | FET General Purpose Power |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | 2N6796 |
2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specied
2N6796
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
100
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
8
5
A
Pulsed Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
32
A
Gate to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
8A
Pulse Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
32
A
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
25
W
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.20
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specications
TC = 25
oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 0.25mA, VGS = 0V
100
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 0.5mA
2
-
4
V
Zero Gate Voltage Drain Current
IDSS
VDS = 100V, VGS = 0V
-
250
A
VDS = 80V, VGS = 0V, TC = 125
oC
-
1000
A
On-State Drain Current (Note 2)
VDS(ON)
ID = 8A, VGS = 10V
-
1.56
V
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 5A, VGS = 10V
-
0.14
0.180
ID = 5A, VGS = 10V, TC = 125
oC
-
0.350
Diode Forward Voltage (Note 2)
VSD
TC = 25
oC, I
S = 8A, VGS = 0V
0.75
-
1.5
V
Forward Transconductance (Note 2)
gfs
VDS = 5V, ID = 5A
3
5.5
9
S
Turn-On Delay Time
td(ON)
VDD 30V, ID = 5A, RG = 50
(Figure 17) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-
30
ns
Rise Time
tr
-
75
ns
Turn-Off Delay Time
td(OFF)
-
40
ns
Fall Time
tf
-
45
ns
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11)
350
600
900
pF
Output Capacitance
COSS
150
300
500
pF
Reverse Transfer Capacitance
CRSS
50
100
150
pF
Thermal Resistance Junction to Case
RθJC
--
5
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
175
oC/W
Safe Operating Area
SOA
VDS = 80V, ID = 310mA
25
-
W
VDS = 3.12V, ID = 8A
25
-
W
Source to Drain Diode Specications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Reverse Recovery Time
trr
TJ = 150
oC, I
SD = 8A, dISD/dt = 100A/s
-
300
-
ns
Reverse Recovered Charge
QRR
TJ = 150
oC, I
SD = 8A, dISD/dt = 100A/s
-
1.5
-
C
NOTES:
2. Pulse test: pulse width
≤ 300s, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
2N6796
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