參數(shù)資料
型號: 2N6796
廠商: INTERSIL CORP
元件分類: FET General Purpose Power
英文描述: 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 3/7頁
文件大?。?/td> 140K
代理商: 2N6796
3
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
TC, CASE TEMPERATURE (
oC)
PO
WER
DISSIP
A
TION
MUL
TIPLIER
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I D
,DRAIN
CURRENT
(A)
TC, CASE TEMPERATURE (
oC)
150
25
75
125
10
8
6
4
2
t, RECTANGULAR PULSE DURATION (s)
Z
θJC
,NORMALIZED
THERMAL
IMPED
ANCE
10-3
10-2
1.0
10-5
10-4
0.01
0.1
10
10-1
1
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
t1
t2
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
I D
,DRAIN
CURRENT
(A)
100
1
10
-1
-0.1
1000
10
s
100
s
1ms
10ms
100ms
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25
oC
OPERATION IN THIS AREA IS
LIMITED BY rDS(ON)
I D
,DRAIN
CURRENT
(A)
010
20
30
40
5
10
15
20
25
50
10V
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
0
8V
7V
6V
5V
4V
30
35
9V
2N6796
相關(guān)PDF資料
PDF描述
2N7000P003 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2NT1-1N TOGGLE SWITCH, DPDT, LATCHED, PANEL MOUNT
2NT1-1E TOGGLE SWITCH, DPDT, LATCHED, PANEL MOUNT
2NT887-10H TOGGLE SWITCH, DPDT, LATCHED, PANEL MOUNT-THREADED
2NT91-7E TOGGLE SWITCH, DPDT, MOMENTARY, PANEL MOUNT-THREADED
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6796 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39
2N6796_03 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL
2N6796_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET
2N6796JANTX 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述:
2N6796JANTXV 制造商:International Rectifier 功能描述: