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參數資料
| 型號： | 2N6796 |
| 廠商： | INTERSIL CORP |
| 元件分類： | FET General Purpose Power |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數： | 5/7頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 2N6796 |
5
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specied (Continued)
6
4
2
0
510
ID, DRAIN CURRENT (A)
0
10
8
15
20
25
g
fs
,TRANSCONDUCT
ANCE
(S)
80
s PULSE TEST
TJ = 125
oC
TJ = -55
oC
TJ = 25
oC
30
35
0
2
10
5
2
1
VSD, SOURCE TO DRAIN VOLTAGE (V)
I SD
,SOURCE
T
O
DRAIN
CURRENT
(A)
TJ = 150
oC
TJ = 25
oC
5
0.5
1.0
1.5
2.0
2.5
3.0
15
10
5
0
8
16
24
32
VDS = 20V
VDS = 50V
VDS = 80V
Qg, TOTAL GATE CHARGE (nC)
V
GS
,GA
TE
T
O
SOURCE
(V)
20
0
ID = 18A
2N6796
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相關代理商/技術參數 |
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|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
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| 2N6796_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
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