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參數(shù)資料
| 型號： | 2N6796 |
| 廠商： | INTERSIL CORP |
| 元件分類： | FET General Purpose Power |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 140K |
| 代理商： | 2N6796 |
4
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specied (Continued)
0
5
0
1
23
5
15
I D
,DRAIN
CURRENT
(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
4
25
PULSE DURATION = 80
s
30
35
7V
4V
5V
6V
8V
9V
VGS = 10V
6
15
10
5
0
24
I D
,DRAIN
CURRENT
(A)
VGS, GATE TO SOURCE VOLTAGE (V)
0
25
20
68
10
TJ = 125
oC
TJ = 25
oC
TJ = -55
oC
30
80
s PULSE TEST
35
ID, DRAIN CURRENT (A)
r DS(ON)
,ON-ST
A
TE
RESIST
ANCE
(
)
0.4
0.3
0.2
0.1
0
010
20
30
40
VGS = 20V
VGS = 10V
50
60
0.5
0.6
1.75
1.00
0.75
0.50
0.25
-80
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
80
120
160
1.25
1.50
NORMALIZED
ON-RESIST
ANCE
2.00
VGS = 10V
ID = 4A
1.10
0.95
0.90
0.85
0.80
-80
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
80
120
160
1.00
1.05
NORMALIZED
ON-RESIST
ANCE
1.15
2000
400
0
020
50
C,
CAP
A
CIT
ANCE
(pF)
1200
VDS, DRAIN TO SOURCE VOLTAGE (V)
1600
800
CISS
COSS
CRSS
10
30
40
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
2N6796
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
| 2N6796_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
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