參數(shù)資料
型號(hào)： 2N7000J05Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 746K
代理商： 2N7000J05Z
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A = 25°C unless otherwise noted
Symbol
Parameter
2N7000
2N7002
NDS7002A
Units
V
DSS
Drain-Source Voltage
60
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50s)
±40
I
D
Maximum Drain Current - Continuous
200
115
280
mA
- Pulsed
500
800
1500
P
D
Maximum Power Dissipation
400
200
300
mW
Derated above 25
oC
3.2
1.6
2.4
mW/°C
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
-65 to 150
°C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
312.5
625
417
°C/W
2N7000.SAM Rev. A1
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low R
DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
S
D
G
S
G
D
TO-92
1997 Fairchild Semiconductor Corporation
2N7000
(TO-236AB)
2N7002/NDS7002A
相關(guān)PDF資料
PDF描述
2N7002D87Z 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7000D74Z 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000J18Z 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7000L-T92-R 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000-T92-K 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7000K 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N Channel MOSFET ESD Protected 2000V
2N7000KL 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET
2N7000KL 制造商:Vishay Intertechnologies 功能描述:MOSFET N TO-92
2N7000KL-TR1 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000KL-TR1-E3 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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