參數(shù)資料
型號(hào)： 2N7000J05Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TO-92, 3 PIN
文件頁(yè)數(shù)： 9/14頁(yè)
文件大?。?/td> 746K
代理商： 2N7000J05Z
2N7000.SAM Rev. A1
0
1
2
3
4
5
0
0 .5
1
1 .5
2
V
, DRAIN-SOURCE VOLTAGE (V)
I
,
DR
A
IN-SOURCE
CURRENT
(A)
9.0
4.0
8.0
3.0
7.0
V
= 10V
GS
DS
D
5.0
6.0
-50
-25
0
25
50
75
100
125
150
0 .5
0 .75
1
1 .25
1 .5
1 .75
2
T , JUNCTION T EMPERATURE (°C)
DRAI
N
-SOURCE
ON-RESISTANCE
J
R
,
NO
R
MA
LIZED
DS(ON)
V
= 10V
GS
I
= 500mA
D
-50
-25
0
25
50
75
100
125
150
0 .8
0 .85
0 .9
0 .95
1
1 .05
1 .1
T , JUNCTION TEM PERATU RE (°C)
GAT
E-SOURCE
THRESHOLD
VOLTAGE
J
I
= 1 mA
D
V
= V
DS
GS
V
,
NOR
MAL
IZED
th
0
0 .4
0 .8
1 .2
1 .6
2
0 .5
1
1 .5
2
2 .5
3
I
, DRA IN CURRENT (A)
DRAI
N
-SOURCE
ON-RESISTANCE
V
=4.0V
GS
D
R
,
NO
RMALIZED
DS(on)
7 .0
4 .5
10
5 .0
6 .0
9 .0
8 .0
0
0 .4
0 .8
1 .2
1 .6
2
0
0 .5
1
1 .5
2
2 .5
3
I
, DRAIN CURRENT (A)
DRAIN-SOURCE
ON-RESISTANCE
T = 125° C
J
25° C
-55°C
D
V
= 10V
GS
R
,
NO
RMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2
V
, GATE TO SOURCE VOLTAGE (V)
I
,
DR
A
IN
CURRENT
(A)
V
= 10V
DS
GS
D
T
= -55°C
J
25° C
125° C
2N7000 / 2N7002 / NDS7002A
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