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參數(shù)資料
| 型號： | 2N7002/E9 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2N7002/E9 |
2N7002
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 10
A60
70
—
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
A
1.0
2.0
2.5
V
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
——
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60V, VGS = 0V
——
1
A
VDS = 60V, VGS = 0V, TC = 125°C
——
500
On-State Drain Current(1)
ID(on)
VDS
≥ 7.5V, VGS = 10V
800
1500
—
mA
Drain-Source On-State Resistance(1)
RDS(on)
VGS = 10V, ID = 500mA
—
1.7
3.0
VGS = 5V, ID = 50mA
—
2.5
4.0
Forward Transconductance(1)
gfs
VDS = 10V, ID = 200mA
—
250
—
mS
Dynamic
Turn-On Time
ton
—
720
Turn-Off Time
toff
—
12
20
ns
Input Capacitance
Ciss
VGS = 0V
—
33
50
Output Capacitance
Coss
VDS = 25V
—
4.3
25
pF
Reverse Transfer Capacitance
Crss
f = 1.0MHZ
—
1.6
5
Source-Drain Diode
Diode Forward Voltage(1)
VSD
IS = 230mA, VGS = 0V
—
0.85
1.5
V
Notes:
(1) Pulse test; pulse width
≤ 300 s, duty cycle ≤ 2%
VDD = 30V, RL = 150
ID = 200mA, VGEN = 10V
RG = 25
G
D
S
VIN
VDD
VGEN
RG
RD
VOUT
DUT
Input, VIN
td(on)
Output, VOUT
ton
tr
td(off)
toff
tf
INVERTED
90%
10%
90 %
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E9/3K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E-E3 | 制造商:Vishay Siliconix 功能描述:SS MOS LEAD FREE - Bulk |
| 2N7002ELT1 | 制造商:WILLAS 制造商全稱:WILLAS 功能描述:310 mAmps, 60 Volts |
| 2N7002EPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002ESEPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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