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參數(shù)資料
| 型號： | 2N7002/E9 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 104K |
| 代理商： | 2N7002/E9 |
2N7002
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
TJ = 125
°C
Fig. 7 – Source-Drain Diode
Forward Voltage
25
°C
--55
°C
VGS = 0V
I S
-
-Source
Current
(A)
VSD -- Source-to-Drain Voltage (V)
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
ID = 230mA
0
0.5
1.0
2.0
1.5
2.5
3.0
3.5
2
R
DS(ON)
-
-On-Resistance
(
)
VGS -- Gate-to-Source Voltage (V)
468
10
TJ = 125
°C
25
°C
60
62
64
66
68
70
72
74
--50
--25
25
50
75
100
125
0
Fig. 8 – Breakdown Voltage vs.
Junction Temperature
150
ID = 250
A
BV
DSS
-
-Breakdown
V
oltage
(V)
TJ -- Junction Temperature (
°C)
--50
--25
25
50
75
100
125
0
1.4
1.6
1.8
2
2.2
2.4
2.6
Fig. 9 – Threshold Voltage
150
ID = 250
A
V
GS(th)
-
-Gate-to-Source
Threshold
V
oltage
(V)
TJ -- Junction Temperature (
°C)
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| 2N7002CSM-QR-B | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002DCSM-JQR-A | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E9/3K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 115MA I(D) | TO-236AB |
| 2N7002E-E3 | 制造商:Vishay Siliconix 功能描述:SS MOS LEAD FREE - Bulk |
| 2N7002ELT1 | 制造商:WILLAS 制造商全稱:WILLAS 功能描述:310 mAmps, 60 Volts |
| 2N7002EPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002ESEPT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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