參數(shù)資料
型號: 2N7002E
廠商: ON SEMICONDUCTOR
元件分類: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù): 4/5頁
文件大?。?/td> 99K
代理商: 2N7002E
2N7002E
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate
to
Source and
Drain
to
Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
Figure 9. Diode Forward Voltage vs. Current
V
SD
, SOURCE
TO
DRAIN VOLTAGE (V)
1.2
1.0
0.8
0.6
0.4
0.2
0.01
1
10
V
G
,
T
S
I
S
,
T
J
= 25
°
C
I
D
= 0.25 A
20
16
12
8
4
0
0
10
20
30
40
C
C
iss
C
oss
C
rss
T
J
= 25
°
C
V
GS
= 0 V
GATE
TO
SOURCE OR DRAIN
TO
SOURCE VOLTAGE (V)
T
J
= 25
°
C
T
J
= 85
°
C
V
GS
= 0 V
0.1
相關(guān)PDF資料
PDF描述
2N7002LT1 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
2N7002LT1G Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
2N7002LT3 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
2N7002LT3G Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002E,215 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002E_10 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002E_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23
2N7002E215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23
2N7002-E3 功能描述:MOSFET 60V 0.115A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube