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參數(shù)資料
| 型號(hào)： | 2N7002LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
| 中文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | 2N7002LT3G |
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 2
1
Publication Order Number:
2N7002L/D
2N7002L
Small Signal MOSFET
60 V, 115 mA, NChannel SOT23
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
60
Vdc
DrainGate Voltage (R
GS
= 1.0 M )
V
DGR
60
Vdc
Drain Current
Continuous T
C
= 25
°
C (Note 1)
Continuous
T
C
= 100
°
C (Note 1)
Pulsed (Note 2)
I
D
I
D
I
DM
±
115
±
75
±
800
mAdc
GateSource Voltage
Continuous
Nonrepetitive (t
p
≤
50 s)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 3) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate,(Note 4) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to
+150
°
C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
3. FR5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
2N7002LT1
SOT23
3000 Tape & Reel
NChannel
SOT23
CASE 318
STYLE 21
W
702
702
W
= Device Code
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
2
1
Gate
Drain
2
1
3
Source
2N7002LT3
10,000 Tape & Reel
http://onsemi.com
2N7002LT1G
SOT23
(Pbfree)
3000 Tape & Reel
2N7002LT3G
10,000 Tape & Reel
60 V
7.5 @ 10 V,
500 mA
R
DS(on)
MAX
115 mA
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002LTG | 制造商:ON Semiconductor 功能描述: |
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| 2N7002M1PT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002-MR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFET 2N7002 MINIREEL 500PCS |
| 2N7002MTF | 功能描述:MOSFET N-CHANNEL 60V 115mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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