參數(shù)資料
型號: 2N7002L
廠商: ON SEMICONDUCTOR
英文描述: Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
文件頁數(shù): 1/4頁
文件大?。?/td> 58K
代理商: 2N7002L
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 2
1
Publication Order Number:
2N7002L/D
2N7002L
Small Signal MOSFET
60 V, 115 mA, NChannel SOT23
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
60
Vdc
DrainGate Voltage (R
GS
= 1.0 M )
V
DGR
60
Vdc
Drain Current
Continuous T
C
= 25
°
C (Note 1)
Continuous
T
C
= 100
°
C (Note 1)
Pulsed (Note 2)
I
D
I
D
I
DM
±
115
±
75
±
800
mAdc
GateSource Voltage
Continuous
Nonrepetitive (t
p
50 s)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 3) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate,(Note 4) T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to
+150
°
C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
3. FR5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
2N7002LT1
SOT23
3000 Tape & Reel
NChannel
SOT23
CASE 318
STYLE 21
W
702
702
W
= Device Code
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
2
1
Gate
Drain
2
1
3
Source
2N7002LT3
10,000 Tape & Reel
http://onsemi.com
2N7002LT1G
SOT23
(Pbfree)
3000 Tape & Reel
2N7002LT3G
10,000 Tape & Reel
60 V
7.5 @ 10 V,
500 mA
R
DS(on)
MAX
115 mA
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
2N7002 N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場效應(yīng)管)
2N7002 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流0.5A,N溝道增強(qiáng)型垂直DMOS場效應(yīng)管)
2N7007 N-Channel Enhancement-Mode Vertical DMOS FET
2N7008-G N-Channel Enhancement-Mode Vertical DMOS FETs
2N7008 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流0.5A,N溝道增強(qiáng)型垂直DMOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002L_10 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:60V, 115mA, N-CHANNEL MOSFET
2N7002L_12 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23
2N7002L6327HTSA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 60V 300MA SOT-23
2N7002L-AE2-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET
2N7002L-AE3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR