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參數(shù)資料
| 型號： | 2N7002 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流0.5A，N溝道增強型垂直DMOS場效應管) |
| 中文描述： | N溝道增強型場效應管垂直的DMOS（擊穿電壓60V的，開態(tài)漏極電流為0.5A，?溝道增強型垂直的DMOS場效應管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2N7002 |
7-9
2N7002
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-236AB*
7.5
0.5A
2N7002
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
30V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Driver (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Gate
Source
Drain
TO-236AB
(SOT-23)
top view
Product marking for TO-236AB:
702
F
where
F
= 2-week alpha date code
Ordering Information
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| 2N7007 | N-Channel Enhancement-Mode Vertical DMOS FET |
| 2N7008-G | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N7008 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,開態(tài)漏極電流0.5A，N溝道增強型垂直DMOS場效應管) |
| 2N7008 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N7012 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.3A I(D) | TO-250VAR |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002 _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002 215 | 制造商:PHILIPS-SEMI 功能描述: |
| 2N7002 BK | 功能描述:MOSFET N-CH 60V 0.115A SOT-23 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時）:115mA（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:7.5 歐姆 @ 500mA，10V 不同 Id 時的 Vgs（th）（最大值）:2.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:0.59nC(4.5V) 不同 Vds 時的輸入電容（Ciss）:50pF @ 25V 功率 - 最大值:350mW 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:SOT-23 標準包裝:3,500 |
| 2N7002 H6327 | 功能描述:MOSFET N-Channel 60V MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002 L6327 | 功能描述:MOSFET N-KANAL SML SIG MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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