參數資料
型號: 2N7002L
廠商: ON SEMICONDUCTOR
英文描述: Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
文件頁數: 2/4頁
文件大小: 58K
代理商: 2N7002L
2N7002L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0, I
D
= 10 Adc)
V
(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 60 Vdc)
T
= 25
°
C
T
J
= 125
°
C
I
DSS
1.0
500
Adc
GateBody Leakage Current, Forward
(V
GS
= 20 Vdc)
I
GSSF
100
nAdc
GateBody Leakage Current, Reverse
(V
GS
= 20 Vdc)
I
GSSR
100
nAdc
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
1.0
2.5
Vdc
OnState Drain Current
(V
DS
2.0 V
DS(on)
, V
GS
= 10 Vdc)
I
D(on)
500
mA
Static DrainSource OnState Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
V
DS(on)
3.75
0.375
Vdc
Static DrainSource OnState Resistance
(V
GS
= 10 V, I
D
= 500 mAdc)
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
r
DS(on)
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(V
DS
2.0 V
DS(on)
, I
D
= 200 mAdc)
g
FS
80
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
50
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
25
pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
5.0
pF
SWITCHING CHARACTERISTICS
(Note 5)
TurnOn Delay Time
(V
= 25 Vdc, I
R
G
= 25 , R
L
= 50 , V
gen
= 10 V)
500 mAdc,
t
d(on)
20
ns
TurnOff Delay Time
t
d(off)
40
ns
BODYDRAIN DIODE RATINGS
Diode Forward OnVoltage
(I
S
= 11.5 mAdc, V
GS
= 0 V)
V
SD
1.5
Vdc
Source Current Continuous
(Body Diode)
I
S
115
mAdc
Source Current Pulsed
I
SM
800
mAdc
5. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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