參數(shù)資料
型號: 2N7002PW
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 60 V, 310 mA N-channel Trench MOSFET
中文描述: 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SC-70, 3 PIN
文件頁數(shù): 2/15頁
文件大小: 148K
代理商: 2N7002PW
2N7002PW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
2 of 15
NXP Semiconductors
2N7002PW
60 V, 310 mA N-channel Trench MOSFET
2.
Pinning information
3.
Ordering information
4.
Marking
[1]
% = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Table 2.
Pin
1
2
3
Pinning information
Symbol
Description
G
gate
S
source
D
drain
Simplified outline
Graphic symbol
SOT323 (SC-70)
1
2
3
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
2N7002PW
Table 4.
Type number
2N7002PW
Marking codes
Marking code
[1]
X8%
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
amb
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-65
Max
60
20
310
240
1.2
260
310
830
150
150
150
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
10 μs
T
amb
= 25 °C
[1]
[1]
I
DM
P
tot
peak drain current
total power dissipation
[2]
[1]
T
sp
= 25 °C
T
j
T
amb
T
stg
Source-drain diode
I
S
junction temperature
ambient temperature
storage temperature
source current
T
amb
= 25 °C
[1]
-
310
mA
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