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參數(shù)資料
| 型號： | 2N7002PW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 60 V, 310 mA N-channel Trench MOSFET |
| 中文描述： | 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 2N7002PW |
2N7002PW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 15
NXP Semiconductors
2N7002PW
60 V, 310 mA N-channel Trench MOSFET
7.
Characteristics
Table 7.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
I
D
= 10 μA; V
GS
= 0 V; T
j
= 25 °C
60
-
-
V
V
GSth
I
D
= 250 μA; V
DS
= V
GS
; T
j
= 25 °C
1.1
1.75
2.4
V
I
DSS
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 5 V; I
D
= 50 mA; pulsed;
t
p
≤
300 μs;
δ ≤
0.01 ; T
j
= 25 °C
V
GS
= 10 V; I
D
= 500 mA; pulsed;
t
p
≤
300 μs;
δ ≤
0.01 ; T
j
= 25 °C
V
DS
= 10 V; I
D
= 200 mA; pulsed;
t
p
≤
300 μs;
δ ≤
0.01 ; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
1.3
1
10
100
100
2
μA
μA
nA
nA
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
1
1.6
g
fs
forward
transconductance
-
400
-
mS
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
I
D
= 300 mA; V
DS
= 30 V; V
GS
= 4.5 V;
T
j
= 25 °C
-
-
-
-
-
-
0.6
0.2
0.2
30
7
4
0.8
-
-
50
-
-
nC
nC
nC
pF
pF
pF
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
T
j
= 25 °C
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
V
DS
= 50 V; R
L
= 250
; V
GS
= 10 V;
R
G(ext)
= 6
; T
j
= 25 °C
-
-
-
-
3
4
10
5
6
-
20
-
ns
ns
ns
ns
source-drain voltage
I
S
= 115 mA; V
GS
= 0 V; T
j
= 25 °C
0.47
0.75
1.1
V
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