參數(shù)資料
型號: 2N7002PW
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 60 V, 310 mA N-channel Trench MOSFET
中文描述: 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SC-70, 3 PIN
文件頁數(shù): 3/15頁
文件大小: 148K
代理商: 2N7002PW
2N7002PW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
3 of 15
NXP Semiconductors
2N7002PW
60 V, 310 mA N-channel Trench MOSFET
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
I
DM
= single pulse
(1) t
p
= 100
μ
s
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
sp
= 25 °C
(6) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
Fig 3.
T
amb
(
°
C)
75
175
125
25
75
25
017aaa001
40
80
120
P
der
(%)
0
T
amb
(
°
C)
75
175
125
25
75
25
017aaa002
40
80
120
I
der
(%)
0
017aaa027
10
1
10
2
1
10
I
D
(A)
10
3
V
DS
(V)
10
1
10
2
10
1
(1)
(2)
(3)
(4)
(5)
(6)
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