參數(shù)資料
型號(hào)： 2N7633M2
元件分類： 小信號(hào)晶體管
英文描述： 800 mA, 60 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： HERMETIC SEALED, FLAT PACK-14
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 316K
代理商： 2N7633M2
Absolute Maximum Ratings (Per Die)
Parameter
N-Channel
P-Channel
Units
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
0.8
-0.56
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
0.5
-0.35
IDM
Pulsed Drain Current
3.2
-2.24
PD @ TC = 25°C
Max. Power Dissipation
0.6
W
Linear Derating Factor
0.005
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
16
26
mJ
IAR
Avalanche Current
0.8
-0.56
A
EAR
Repetitive Avalanche Energy
0.06
mJ
dv/dt
Peak Diode Recovery dv/dt
10.2
-5.79
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.63 in./1.6 mm from case for 10s)
Weight
0.52 (Typical)
g
Pre-Irradiation
oC
A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (14-LEAD FLAT PACK)
03/17/08
www.irf.com
1
For footnotes refer to the last page
IRHLA7670Z4
60V, Combination 2N-2P-CHANNEL
TECHNOLOGY
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n Light Weight
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
2N7633M2
14-Lead Flat Pack
PD-97251
Product Summary
Part Number
Radiation Level
RDS(on)
ID
CHANNEL
0.60
0.8A
N
1.36
-0.56A
P
0.60
0.8A
N
1.36
-0.56A
P
IRHLA7670Z4
IRHLA7630Z4
100K Rads (Si)
300K Rads (Si)
相關(guān)PDF資料
PDF描述
2N911 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N718 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N2586 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N2221 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N706A 50 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
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