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參數(shù)資料
| 型號(hào)： | 2PA1774SM |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類(lèi)： | 雙極晶體管 |
| 英文描述： | PNP general purpose transistor |
| 中文描述： | PNP通用型晶體管 |
| 封裝： | 2PA1774QM<SOT883 (SOT883)|<<http://www.nxp.com/packages/SOT883.html<1<Always Pb-free,;2PA1774RM<SOT883 (SOT883)|<<http://www.nxp.com/packages/SOT883.html<1<Always P |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | 2PA1774SM |
2004 Feb 19
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Notes
1.
2.
Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μ
m copper strip line.
Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1.
2.
Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μ
m copper strip line.
Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
40
5
100
200
100
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
V
V
V
mA
mA
mA
T
amb
≤
25
°
C
note 1
note 2
65
65
250
430
+150
150
+150
mW
mW
°
C
°
C
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
note 1
note 2
500
290
K/W
K/W
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