- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371474 > 2SA0886 (PANASONIC CORP) Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA0886 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) |
| 中文描述： | 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 95K |
| 代理商： | 2SA0886 |
Power Transistors
2SA0886
(2SA886)
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00003BED
For low-frequency power amplification
Complementary to 2SC1847
■
Features
Output of 4 W can be obtained by a complementary pair with
2SC1847
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
1 mA, I
E
= 0
I
C
=
2 mA, I
B
= 0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
I
C
=
1.5 A, I
B
=
0.15 A
I
C
=
2 A, I
B
=
0.2 A
V
CB
=
5 V, I
E
=
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
= 0, f = 1 MHz
50
40
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
V
Collector-base cutoff current (Emitter open)
1
100
10
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
Forward current transfer ratio
*
80
220
Collector-emitter saturation voltage
V
CE(sat)
1.0
1.5
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
V
Transition frequency
150
MHz
Collector output capacitance
(Common base, input open circuited)
45
pF
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
40
5
1.5
3
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
T
stg
1.2
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Note) The part numbers in the parenthesis show conventional part number.
Rank
Q
R
h
FE1
80 to 160
120 to 220
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) |
| 2SA0900 | For low-frequency Power amplification Complementary |
| 2SA0914 | For audio system/pli drive |
| 2SA0921 | For high breakdown voltage low-noise amplification Complementary |
| 2SA0963 | For low-frequency power amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA0886(2SA886) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA0886 (2SA886) - PNP Transistor |
| 2SA08860Q | 功能描述:TRANS PNP HF 40VCEO 1.5A TO-126 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA0886Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA0886R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。