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參數資料
| 型號： | 2SA886 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) |
| 中文描述： | 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 95K |
| 代理商： | 2SA886 |
Power Transistors
2SA0886
(2SA886)
Silicon PNP epitaxial planar type
1
Publication date: February 2003
SJD00003BED
For low-frequency power amplification
Complementary to 2SC1847
■
Features
Output of 4 W can be obtained by a complementary pair with
2SC1847
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
1 mA, I
E
= 0
I
C
=
2 mA, I
B
= 0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
I
C
=
1.5 A, I
B
=
0.15 A
I
C
=
2 A, I
B
=
0.2 A
V
CB
=
5 V, I
E
=
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
= 0, f = 1 MHz
50
40
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
V
Collector-base cutoff current (Emitter open)
1
100
10
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
Forward current transfer ratio
*
80
220
Collector-emitter saturation voltage
V
CE(sat)
1.0
1.5
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
V
Transition frequency
150
MHz
Collector output capacitance
(Common base, input open circuited)
45
pF
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
40
5
1.5
3
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power dissipation
P
C
T
j
T
stg
1.2
W
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Note) The part numbers in the parenthesis show conventional part number.
Rank
Q
R
h
FE1
80 to 160
120 to 220
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA886P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA886Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA886R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA887 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SA888 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-25V -.05A .35W EBC |
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